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| SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSUE 1 - MARCH 1999 FEATURES FCX1053A C * * * * * 2W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 21mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 78mat 4.5A E C B Partmarking Detail - 053 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 150 75 5 10 3 1 2 -55 to +150 UNIT V V V A A W W C recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. FCX1053A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL MIN. V(BR)CBO VCES VCEO VCEV V(BR)EBO ICBO IEBO ICES VCE(sat) 150 150 75 150 5 TYP. 250 250 100 250 8.8 0.9 0.3 1.5 21 55 150 160 350 900 825 270 300 300 40 440 450 450 60 20 162 900 140 21 30 10 10 10 30 75 200 210 440 1000 950 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=100A IC=100A IC=10mA IC=100A, VEB=1V IE=100A VCB=120V VEB=4V VCES=120V IC=0.2A, IB=20mA* IC=0.5A, IB=20mA* IC=1A, IB=10mA* IC=2A, IB=100mA* IC=4.5A, IB=200mA* IC=3A, IB=100mA* IC=3A, VCE=2V* IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=4.5A, VCE=2V* IC=10A, VCE=2V* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 1200 Switching Times ton toff ns ns MHz pF 2% IC=2A, IB1=IB2=20mA, VCC=50V IC=2A, IB1=IB2=20mA, VCC=50V IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle FCX1053A TYPICAL CHARACTERISTICS 0.8 +25C 0.8 IC/IB=30 VCE(sat) - (V) VCE(sat) - (V) 0.6 IC/IB=10 IC/IB=30 IC/IB=100 0.6 -55C +25C +100C +150C 0.4 0.4 0.2 0.2 0 1m 10m 100m 1 10 100 0 1m 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC 600 VCE=2V VCE(sat) v IC 1.6 +100C +25C -55C IC/IB=30 hFE - Typical Gain 400 VBE(sat) - (V) 1.2 0.8 0.4 0 1m -55C +25C +100C +150C 200 0 1m 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) 10m 100m 1 10 100 hFE v IC 10 VBE(sat) v IC VCE=2V 1.2 IC - Collector Current (A) VBE(on) - (V) 1 0.8 -55C +25C +100C +150C 0.4 100m DC 1s 100ms 10ms 1ms 100us 0 1m IC - Collector Current (A) 10m 100m 1 10 100 10m 100m 1 10 100 VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area |
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